Top

PHT2NQ10T Datasheet

PHT2NQ10T,135 Cover
DatasheetPHT2NQ10T,135
File Size269.45 KB
Total Pages12
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHT2NQ10T,135
Description MOSFET N-CH 100V 2.5A SOT223

PHT2NQ10T,135 - NXP

PHT2NQ10T Datasheet Page 1
PHT2NQ10T Datasheet Page 2
PHT2NQ10T Datasheet Page 3
PHT2NQ10T Datasheet Page 4
PHT2NQ10T Datasheet Page 5
PHT2NQ10T Datasheet Page 6
PHT2NQ10T Datasheet Page 7
PHT2NQ10T Datasheet Page 8
PHT2NQ10T Datasheet Page 9
PHT2NQ10T Datasheet Page 10
PHT2NQ10T Datasheet Page 11
PHT2NQ10T Datasheet Page 12

The Products You May Be Interested In

PHT2NQ10T,135 PHT2NQ10T,135 NXP MOSFET N-CH 100V 2.5A SOT223 146

More on Order

URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

430mOhm @ 1.75A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

5.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

160pF @ 25V

FET Feature

-

Power Dissipation (Max)

6.25W (Tc)

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223

Package / Case

TO-261-4, TO-261AA