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PHP63NQ03LT Datasheet

PHP63NQ03LT,127 Cover
DatasheetPHP63NQ03LT,127
File Size267.88 KB
Total Pages14
ManufacturerNXP
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts PHP63NQ03LT,127, PHD63NQ03LT,118
Description MOSFET N-CH 30V 68.9A TO220AB, MOSFET N-CH 30V 68.9A DPAK

PHP63NQ03LT,127 - NXP

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The Products You May Be Interested In

PHP63NQ03LT,127 PHP63NQ03LT,127 NXP MOSFET N-CH 30V 68.9A TO220AB 499

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PHD63NQ03LT,118 PHD63NQ03LT,118 NXP MOSFET N-CH 30V 68.9A DPAK 245

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

68.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.6nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 25V

FET Feature

-

Power Dissipation (Max)

111W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

68.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.6nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 25V

FET Feature

-

Power Dissipation (Max)

111W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63