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PHKD6N02LT Datasheet

PHKD6N02LT,518 Cover
DatasheetPHKD6N02LT,518
File Size743.74 KB
Total Pages13
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHKD6N02LT,518
Description MOSFET 2N-CH 20V 10.9A SOT96-1

PHKD6N02LT,518 - Nexperia

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PHKD6N02LT,518 PHKD6N02LT,518 Nexperia MOSFET 2N-CH 20V 10.9A SOT96-1 516

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URL Link

PHKD6N02LT,518

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

10.9A

Rds On (Max) @ Id, Vgs

20mOhm @ 3A, 5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.3nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

950pF @ 10V

Power - Max

4.17W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO