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PHKD3NQ10T Datasheet

PHKD3NQ10T,518 Cover
DatasheetPHKD3NQ10T,518
File Size291.31 KB
Total Pages13
ManufacturerNexperia
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHKD3NQ10T,518
Description MOSFET 2N-CH 100V 3A 8SOIC

PHKD3NQ10T,518 - Nexperia

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URL Link

PHKD3NQ10T,518

Nexperia

Manufacturer

Nexperia USA Inc.

Series

TrenchMOS™

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3A

Rds On (Max) @ Id, Vgs

90mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

633pF @ 20V

Power - Max

2W

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO