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PHK4NQ20T Datasheet

PHK4NQ20T,518 Cover
DatasheetPHK4NQ20T,518
File Size233.85 KB
Total Pages12
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts PHK4NQ20T,518
Description MOSFET N-CH 200V 4A SOT96-1

PHK4NQ20T,518 - NXP

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PHK4NQ20T,518 PHK4NQ20T,518 NXP MOSFET N-CH 200V 4A SOT96-1 527

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

130mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1230pF @ 25V

FET Feature

-

Power Dissipation (Max)

6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)