Top

PDTD123YK Datasheet

PDTD123YK,115 Cover
DatasheetPDTD123YK,115
File Size241.68 KB
Total Pages11
ManufacturerNXP
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts PDTD123YK,115, PDTD123YS,126, PDTD123YT,215
Description TRANS PREBIAS NPN 250MW SMT3, TRANS PREBIAS NPN 500MW TO92-3, TRANS PREBIAS NPN 250MW TO236AB

PDTD123YK,115 - NXP

PDTD123YK Datasheet Page 1
PDTD123YK Datasheet Page 2
PDTD123YK Datasheet Page 3
PDTD123YK Datasheet Page 4
PDTD123YK Datasheet Page 5
PDTD123YK Datasheet Page 6
PDTD123YK Datasheet Page 7
PDTD123YK Datasheet Page 8
PDTD123YK Datasheet Page 9
PDTD123YK Datasheet Page 10
PDTD123YK Datasheet Page 11

The Products You May Be Interested In

PDTD123YK,115 PDTD123YK,115 NXP TRANS PREBIAS NPN 250MW SMT3 379

More on Order

PDTD123YS,126 PDTD123YS,126 NXP TRANS PREBIAS NPN 500MW TO92-3 420

More on Order

PDTD123YT,215 PDTD123YT,215 Nexperia TRANS PREBIAS NPN 250MW TO236AB 202510

More on Order

URL Link

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3; MPAK

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

PDTD123YT,215

Nexperia

Manufacturer

Nexperia USA Inc.

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

500mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2 kOhms

Resistor - Emitter Base (R2)

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

TO-236AB