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NVTFS6H888NWFTAG Datasheet

NVTFS6H888NWFTAG Cover
DatasheetNVTFS6H888NWFTAG
File Size138.27 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NVTFS6H888NWFTAG, NVTFS6H888NTAG
Description MOSFET N-CH 80V 8WDFN, T8 80V U8FL

NVTFS6H888NWFTAG - ON Semiconductor

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URL Link

NVTFS6H888NWFTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

NVTFS6H888NTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

4.7A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

55mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

4V @ 15µA

Gate Charge (Qg) (Max) @ Vgs

4.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

220pF @ 40V

FET Feature

-

Power Dissipation (Max)

2.9W (Ta), 18W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN