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NVMFD6H852NLWFT1G Datasheet

NVMFD6H852NLWFT1G Cover
DatasheetNVMFD6H852NLWFT1G
File Size126.63 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NVMFD6H852NLWFT1G, NVMFD6H852NLT1G
Description FET NCH 80V, FET NCH 80V

NVMFD6H852NLWFT1G - ON Semiconductor

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URL Link

NVMFD6H852NLWFT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

7A (Ta), 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 26µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

521pF @ 40V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 38W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6) Dual Flag (SO8FL-Dual)

Package / Case

8-PowerTDFN

NVMFD6H852NLT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

7A (Ta), 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

25.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2V @ 26µA

Gate Charge (Qg) (Max) @ Vgs

10nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

521pF @ 40V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 38W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-DFN (5x6) Dual Flag (SO8FL-Dual)

Package / Case

8-PowerTDFN