Top

NVD4809NHT4G Datasheet

NVD4809NHT4G Cover
DatasheetNVD4809NHT4G
File Size117.95 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts NVD4809NHT4G, NTD4809NHT4G, NTD4809NH-35G, NTD4809NH-1G
Description MOSFET N-CH 30V 58A DPAK, MOSFET N-CH 30V 9A DPAK, MOSFET N-CH 30V 9A IPAK, MOSFET N-CH 30V 9A IPAK

NVD4809NHT4G - ON Semiconductor

NVD4809NHT4G Datasheet Page 1
NVD4809NHT4G Datasheet Page 2
NVD4809NHT4G Datasheet Page 3
NVD4809NHT4G Datasheet Page 4
NVD4809NHT4G Datasheet Page 5
NVD4809NHT4G Datasheet Page 6
NVD4809NHT4G Datasheet Page 7
NVD4809NHT4G Datasheet Page 8

The Products You May Be Interested In

NVD4809NHT4G NVD4809NHT4G ON Semiconductor MOSFET N-CH 30V 58A DPAK 223

More on Order

NTD4809NHT4G NTD4809NHT4G ON Semiconductor MOSFET N-CH 30V 9A DPAK 473

More on Order

NTD4809NH-35G NTD4809NH-35G ON Semiconductor MOSFET N-CH 30V 9A IPAK 483

More on Order

NTD4809NH-1G NTD4809NH-1G ON Semiconductor MOSFET N-CH 30V 9A IPAK 389

More on Order

URL Link

NVD4809NHT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 11.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2155pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTD4809NHT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.6A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2155pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTD4809NH-35G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.6A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2155pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Stub Leads, IPak

NTD4809NH-1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9.6A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2155pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Stub Leads, IPak