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NVB5860NLT4G Datasheet

NVB5860NLT4G Cover
DatasheetNVB5860NLT4G
File Size116.58 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NVB5860NLT4G
Description MOSFET N-CH 60V 169A D2PAK

NVB5860NLT4G - ON Semiconductor

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URL Link

NVB5860NLT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

220A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13216pF @ 25V

FET Feature

-

Power Dissipation (Max)

283W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK-3

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB