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NTMS4P01R2 Datasheet

NTMS4P01R2 Cover
DatasheetNTMS4P01R2
File Size227.12 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTMS4P01R2
Description MOSFET P-CH 12V 3.4A 8-SOIC

NTMS4P01R2 - ON Semiconductor

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URL Link

NTMS4P01R2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 4.5A, 4.5V

Vgs(th) (Max) @ Id

1.15V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 9.6V

FET Feature

-

Power Dissipation (Max)

790mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)