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NTMS4935NR2G Datasheet

NTMS4935NR2G Cover
DatasheetNTMS4935NR2G
File Size136.56 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTMS4935NR2G
Description MOSFET N-CH 30V 10A 8SOIC

NTMS4935NR2G - ON Semiconductor

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NTMS4935NR2G NTMS4935NR2G ON Semiconductor MOSFET N-CH 30V 10A 8SOIC 370

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URL Link

NTMS4935NR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.1mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

52.1nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3639pF @ 25V

FET Feature

-

Power Dissipation (Max)

810mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)