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NTMS4177PR2G Datasheet

NTMS4177PR2G Cover
DatasheetNTMS4177PR2G
File Size121.49 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTMS4177PR2G
Description MOSFET P-CH 30V 6.6A 8-SOIC

NTMS4177PR2G - ON Semiconductor

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NTMS4177PR2G NTMS4177PR2G ON Semiconductor MOSFET P-CH 30V 6.6A 8-SOIC 8498

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URL Link

NTMS4177PR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

6.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 11.4A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3100pF @ 24V

FET Feature

-

Power Dissipation (Max)

840mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)