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NTMFS6H836NT1G Datasheet

NTMFS6H836NT1G Cover
DatasheetNTMFS6H836NT1G
File Size134.43 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTMFS6H836NT1G
Description T8 80V SO8FL

NTMFS6H836NT1G - ON Semiconductor

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URL Link

NTMFS6H836NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

15A (Ta), 74A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4V @ 95µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1640pF @ 40V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 89W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

5-DFN (5x6) (8-SOFL)

Package / Case

8-PowerTDFN, 5 Leads