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NTMD6601NR2G Datasheet

NTMD6601NR2G Cover
DatasheetNTMD6601NR2G
File Size95.07 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTMD6601NR2G
Description MOSFET 2N-CH 80V 1.1A 8SOIC

NTMD6601NR2G - ON Semiconductor

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URL Link

NTMD6601NR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

1.1A

Rds On (Max) @ Id, Vgs

215mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

Power - Max

600mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC