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NTLJF4156NTAG Datasheet

NTLJF4156NTAG Cover
DatasheetNTLJF4156NTAG
File Size143.09 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NTLJF4156NTAG, NTLJF4156NT1G
Description MOSFET N-CH 30V 2.5A 6-WDFN, MOSFET N-CH 30V 2.5A 6-WDFN

NTLJF4156NTAG - ON Semiconductor

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URL Link

NTLJF4156NTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

70mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

427pF @ 15V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

710mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad

NTLJF4156NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.5A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

70mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.5nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

427pF @ 15V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

710mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WDFN (2x2)

Package / Case

6-WDFN Exposed Pad