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NTK3142PT1G Datasheet

NTK3142PT1G Cover
DatasheetNTK3142PT1G
File Size125.77 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NTK3142PT1G, NTK3142PT5G
Description MOSFET P-CH 20V 0.215A SOT-723, MOSFET P-CH 20V 0.215A SOT-723

NTK3142PT1G - ON Semiconductor

NTK3142PT1G Datasheet Page 1
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NTK3142PT1G Datasheet Page 5

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URL Link

NTK3142PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

215mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

4Ohm @ 260mA, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

15.3pF @ 10V

FET Feature

-

Power Dissipation (Max)

280mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-723

Package / Case

SOT-723

NTK3142PT5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

215mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

4Ohm @ 260mA, 4.5V

Vgs(th) (Max) @ Id

1.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

15.3pF @ 10V

FET Feature

-

Power Dissipation (Max)

280mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-723

Package / Case

SOT-723