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NTGS1135PT1G Datasheet

NTGS1135PT1G Cover
DatasheetNTGS1135PT1G
File Size104.44 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTGS1135PT1G
Description MOSFET P-CH 8V 4.6A 6-TSOP

NTGS1135PT1G - ON Semiconductor

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NTGS1135PT1G NTGS1135PT1G ON Semiconductor MOSFET P-CH 8V 4.6A 6-TSOP 393

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URL Link

NTGS1135PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

8V

Current - Continuous Drain (Id) @ 25°C

4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

31mOhm @ 4.6A, 4.5V

Vgs(th) (Max) @ Id

850mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

21nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 6V

FET Feature

-

Power Dissipation (Max)

970mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6