Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NTD4910NT4G |
| File Size | 112.33 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NTD4910NT4G, NTD4910N-35G |
| Description | MOSFET N-CH 30V 37A DPAK, MOSFET N-CH 30V 37A IPAK TRIMMED |
NTD4910NT4G - ON Semiconductor
The Products You May Be Interested In
 |
NTD4910NT4G | ON Semiconductor | MOSFET N-CH 30V 37A DPAK | 600 More on Order |
 |
NTD4910N-35G | ON Semiconductor | MOSFET N-CH 30V 37A IPAK TRIMMED | 290 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1203pF @ 15V FET Feature - Power Dissipation (Max) 1.37W (Ta), 27.3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 37A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1203pF @ 15V FET Feature - Power Dissipation (Max) 1.37W (Ta), 27.3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Stub Leads, IPak |