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NTA4151PT1 Datasheet

NTA4151PT1 Cover
DatasheetNTA4151PT1
File Size124.73 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts NTA4151PT1, NTA4151PT1H, NTE4151PT1G, NTA4151PT1G
Description MOSFET P-CH 20V 0.76A SOT-416, MOSFET P-CH 20V 0.76A SC75, MOSFET P-CH 20V 0.76A SC-89, MOSFET P-CH 20V 0.76A SOT-416

NTA4151PT1 - ON Semiconductor

NTA4151PT1 Datasheet Page 1
NTA4151PT1 Datasheet Page 2
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URL Link

NTA4151PT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

760mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

360mOhm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

156pF @ 5V

FET Feature

-

Power Dissipation (Max)

301mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75, SOT-416

Package / Case

SC-75, SOT-416

NTA4151PT1H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

760mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

360mOhm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

156pF @ 5V

FET Feature

-

Power Dissipation (Max)

301mW (Tj)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

SC-75, SOT-416

Package / Case

SC-75, SOT-416

NTE4151PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

760mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

360mOhm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

156pF @ 5V

FET Feature

-

Power Dissipation (Max)

313mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-3

Package / Case

SC-89, SOT-490

NTA4151PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

760mA (Tj)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

360mOhm @ 350mA, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

156pF @ 5V

FET Feature

-

Power Dissipation (Max)

301mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75, SOT-416

Package / Case

SC-75, SOT-416