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NSBC123JDXV6T1G Datasheet

NSBC123JDXV6T1G Cover
DatasheetNSBC123JDXV6T1G
File Size130.85 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 6 part numbers
Associated Parts NSBC123JDXV6T1G, NSBC123JDXV6T5G, SMUN5235DW1T3G, NSBC123JDP6T5G, SMUN5235DW1T1G, MUN5235DW1T1G
Description TRANS 2NPN PREBIAS 0.5W SOT563, TRANS PREBIAS DUAL NPN SOT563, TRANS 2NPN PREBIAS 0.187W SOT363, TRANS 2NPN PREBIAS 0.339W SOT963, TRANS 2NPN PREBIAS 0.187W SOT363

NSBC123JDXV6T1G - ON Semiconductor

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NSBC123JDXV6T5G NSBC123JDXV6T5G ON Semiconductor TRANS PREBIAS DUAL NPN SOT563 401

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SMUN5235DW1T3G SMUN5235DW1T3G ON Semiconductor TRANS 2NPN PREBIAS 0.187W SOT363 263

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NSBC123JDP6T5G NSBC123JDP6T5G ON Semiconductor TRANS 2NPN PREBIAS 0.339W SOT963 511

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SMUN5235DW1T1G SMUN5235DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.187W SOT363 12430

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MUN5235DW1T1G MUN5235DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363 24830

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URL Link

NSBC123JDXV6T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

NSBC123JDXV6T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

SMUN5235DW1T3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

187mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SOT-363

NSBC123JDP6T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

339mW

Mounting Type

Surface Mount

Package / Case

SOT-963

Supplier Device Package

SOT-963

SMUN5235DW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

187mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

MUN5235DW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363