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| Datasheet | NP80N06PLG-E1B-AY |
| File Size | 347.36 KB |
| Total Pages | 12 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NP80N06PLG-E1B-AY, NP80N06MLG-S18-AY |
| Description | MOSFET N-CH 60V 80A TO-263, MOSFET N-CH 60V 80A TO-220 |
NP80N06PLG-E1B-AY - Renesas Electronics America
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.3mOhm @ 40A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 115W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8.6mOhm @ 40A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 115W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |