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NP36P06SLG-E1-AY Datasheet

NP36P06SLG-E1-AY Cover
DatasheetNP36P06SLG-E1-AY
File Size279.25 KB
Total Pages9
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts NP36P06SLG-E1-AY
Description MOSFET P-CH 60V 36A TO-252

NP36P06SLG-E1-AY - Renesas Electronics America

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URL Link

NP36P06SLG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

30mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

52nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3200pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.2W (Ta), 56W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252 (MP-3ZK)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63