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NP160N04TDG-E1-AY Datasheet

NP160N04TDG-E1-AY Cover
DatasheetNP160N04TDG-E1-AY
File Size367.08 KB
Total Pages10
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts NP160N04TDG-E1-AY
Description MOSFET N-CH 40V 160A TO-263

NP160N04TDG-E1-AY - Renesas Electronics America

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URL Link

NP160N04TDG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

160A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

2mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15750pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 220W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-7

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)