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NP110N04PUG-E1-AY Datasheet

NP110N04PUG-E1-AY Cover
DatasheetNP110N04PUG-E1-AY
File Size265.48 KB
Total Pages9
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts NP110N04PUG-E1-AY
Description MOSFET N-CH 40V MP-25ZP/TO-263

NP110N04PUG-E1-AY - Renesas Electronics America

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URL Link

NP110N04PUG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.8mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

390nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

25700pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 288W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB