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| Datasheet | NP100N055PUK-E1-AY |
| File Size | 57.64 KB |
| Total Pages | 1 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NP100N055PUK-E1-AY, NP100N04PUK-E1-AY |
| Description | MOSFET N-CH 55V 100A TO-263, MOSFET N-CH 40V 100A TO-263 |
NP100N055PUK-E1-AY - Renesas Electronics America
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.25mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7350pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 176W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D²Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7050pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 176W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |