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NGTG35N65FL2WG Datasheet

NGTG35N65FL2WG Cover
DatasheetNGTG35N65FL2WG
File Size82.15 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NGTG35N65FL2WG
Description IGBT 650V 60A 167W TO247

NGTG35N65FL2WG - ON Semiconductor

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URL Link

NGTG35N65FL2WG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 35A

Power - Max

300W

Switching Energy

840µJ (on), 280µJ (off)

Input Type

Standard

Gate Charge

125nC

Td (on/off) @ 25°C

72ns/132ns

Test Condition

400V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3