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NGTD13T65F2WP Datasheet

NGTD13T65F2WP Cover
DatasheetNGTD13T65F2WP
File Size98.68 KB
Total Pages3
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NGTD13T65F2WP, NGTD13T65F2SWK
Description IGBT TRENCH FIELD STOP 650V DIE, IGBT TRENCH FIELD STOP 650V DIE

NGTD13T65F2WP - ON Semiconductor

NGTD13T65F2WP Datasheet Page 1
NGTD13T65F2WP Datasheet Page 2
NGTD13T65F2WP Datasheet Page 3

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URL Link

NGTD13T65F2WP

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die

NGTD13T65F2SWK

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

-

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

-

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die