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NGTB50N60S1WG Datasheet

NGTB50N60S1WG Cover
DatasheetNGTB50N60S1WG
File Size84.9 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NGTB50N60S1WG
Description IGBT 50A 600V TO-247

NGTB50N60S1WG - ON Semiconductor

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URL Link

NGTB50N60S1WG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 50A

Power - Max

417W

Switching Energy

1.5mJ (on), 460µJ (off)

Input Type

Standard

Gate Charge

220nC

Td (on/off) @ 25°C

100ns/237ns

Test Condition

400V, 50A, 10Ohm, 15V

Reverse Recovery Time (trr)

94ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3