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NDS8852H Datasheet

NDS8852H Cover
DatasheetNDS8852H
File Size349.57 KB
Total Pages12
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NDS8852H
Description MOSFET N/P-CH 30V 8SOIC

NDS8852H - ON Semiconductor

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URL Link

NDS8852H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.3A, 3.4A

Rds On (Max) @ Id, Vgs

80mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

2.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 15V

Power - Max

1W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC