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NDBA100N10BT4H Datasheet

NDBA100N10BT4H Cover
DatasheetNDBA100N10BT4H
File Size649.8 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NDBA100N10BT4H
Description MOSFET N-CH 100V 100A DPAK

NDBA100N10BT4H - ON Semiconductor

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URL Link

NDBA100N10BT4H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

Rds On (Max) @ Id, Vgs

6.9mOhm @ 50A, 15V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

35nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 50V

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB