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MURTA600120R Datasheet

MURTA600120R Cover
DatasheetMURTA600120R
File Size745.19 KB
Total Pages4
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 4 part numbers
Associated Parts MURTA600120R, MURTA600120, MURTA60060R, MURTA60060
Description DIODE GEN 1.2KV 300A 3 TOWER, DIODE GEN 1.2KV 300A 3 TOWER, DIODE MODULE 600V 600A 3TOWER, DIODE MODULE 600V 600A 3TOWER

MURTA600120R - GeneSiC Semiconductor

MURTA600120R Datasheet Page 1
MURTA600120R Datasheet Page 2
MURTA600120R Datasheet Page 3
MURTA600120R Datasheet Page 4

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URL Link

MURTA600120R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

2.6V @ 300A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

25µA @ 1200V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURTA600120

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

2.6V @ 300A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

25µA @ 1200V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURTA60060R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io) (per Diode)

600A (DC)

Voltage - Forward (Vf) (Max) @ If

1.7V @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

280ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURTA60060

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io) (per Diode)

600A (DC)

Voltage - Forward (Vf) (Max) @ If

1.7V @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

280ns

Current - Reverse Leakage @ Vr

25µA @ 50V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower