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MURTA20060R Datasheet

MURTA20060R Cover
DatasheetMURTA20060R
File Size845.94 KB
Total Pages4
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 4 part numbers
Associated Parts MURTA20060R, MURTA20060, MURTA200120R, MURTA200120
Description DIODE GEN PURP 600V 100A 3 TOWER, DIODE GEN PURP 600V 100A 3 TOWER, DIODE GEN 1.2KV 100A 3 TOWER, DIODE GEN 1.2KV 100A 3 TOWER

MURTA20060R - GeneSiC Semiconductor

MURTA20060R Datasheet Page 1
MURTA20060R Datasheet Page 2
MURTA20060R Datasheet Page 3
MURTA20060R Datasheet Page 4

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MURTA20060R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io) (per Diode)

100A

Voltage - Forward (Vf) (Max) @ If

1.7V @ 100A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

25µA @ 600V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURTA20060

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io) (per Diode)

100A

Voltage - Forward (Vf) (Max) @ If

1.7V @ 100A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

25µA @ 600V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURTA200120R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io) (per Diode)

100A

Voltage - Forward (Vf) (Max) @ If

2.6V @ 100A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

25µA @ 1200V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MURTA200120

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io) (per Diode)

100A

Voltage - Forward (Vf) (Max) @ If

2.6V @ 100A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

25µA @ 1200V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower