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| Datasheet | MT47R512M4EB-25E:C |
| File Size | 8,973.7 KB |
| Total Pages | 127 |
| Manufacturer | Micron Technology Inc. |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | MT47R512M4EB-25E:C, MT47R256M8EB-25E:C |
| Description | IC DRAM 2G PARALLEL 60FBGA, IC DRAM 2G PARALLEL 60FBGA |
MT47R512M4EB-25E:C - Micron Technology Inc.
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 2Gb (512M x 4) Memory Interface Parallel Clock Frequency 400MHz Write Cycle Time - Word, Page 15ns Access Time 400ps Voltage - Supply 1.55V ~ 1.9V Operating Temperature 0°C ~ 85°C (TC) Mounting Type Surface Mount Package / Case 60-TFBGA Supplier Device Package 60-FBGA (9x11.5) |
Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 2Gb (256M x 8) Memory Interface Parallel Clock Frequency 400MHz Write Cycle Time - Word, Page 15ns Access Time 400ps Voltage - Supply 1.55V ~ 1.9V Operating Temperature 0°C ~ 85°C (TC) Mounting Type Surface Mount Package / Case 60-FBGA Supplier Device Package 60-FBGA (9x11.5) |