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| Datasheet | MT47H512M4THN-25E:M |
| File Size | 312.31 KB |
| Total Pages | 13 |
| Manufacturer | Micron Technology Inc. |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | MT47H512M4THN-25E:M, MT47H512M4THN-25E:M TR |
| Description | IC DRAM 2G PARALLEL 400MHZ, IC DRAM 2G PARALLEL 63FBGA |
MT47H512M4THN-25E:M - Micron Technology Inc.
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 2Gb (512M x 4) Memory Interface Parallel Clock Frequency 400MHz Write Cycle Time - Word, Page 15ns Access Time 400ps Voltage - Supply 1.7V ~ 1.9V Operating Temperature 0°C ~ 85°C (TC) Mounting Type Surface Mount Package / Case 63-TFBGA Supplier Device Package 63-FBGA (8x10) |
Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR2 Memory Size 2Gb (512M x 4) Memory Interface Parallel Clock Frequency 400MHz Write Cycle Time - Word, Page 15ns Access Time 400ps Voltage - Supply 1.7V ~ 1.9V Operating Temperature 0°C ~ 85°C (TC) Mounting Type Surface Mount Package / Case 63-TFBGA Supplier Device Package 63-FBGA (8x10) |