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MT47H512M4THN-25E:M Datasheet

MT47H512M4THN-25E:M Cover
DatasheetMT47H512M4THN-25E:M
File Size312.31 KB
Total Pages13
ManufacturerMicron Technology Inc.
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts MT47H512M4THN-25E:M, MT47H512M4THN-25E:M TR
Description IC DRAM 2G PARALLEL 400MHZ, IC DRAM 2G PARALLEL 63FBGA

MT47H512M4THN-25E:M - Micron Technology Inc.

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The Products You May Be Interested In

MT47H512M4THN-25E:M MT47H512M4THN-25E:M Micron Technology Inc. IC DRAM 2G PARALLEL 400MHZ 210

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MT47H512M4THN-25E:M TR MT47H512M4THN-25E:M TR Micron Technology Inc. IC DRAM 2G PARALLEL 63FBGA 293

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URL Link

MT47H512M4THN-25E:M

Micron Technology Inc.

Manufacturer

Micron Technology Inc.

Series

-

Memory Type

Volatile

Memory Format

DRAM

Technology

SDRAM - DDR2

Memory Size

2Gb (512M x 4)

Memory Interface

Parallel

Clock Frequency

400MHz

Write Cycle Time - Word, Page

15ns

Access Time

400ps

Voltage - Supply

1.7V ~ 1.9V

Operating Temperature

0°C ~ 85°C (TC)

Mounting Type

Surface Mount

Package / Case

63-TFBGA

Supplier Device Package

63-FBGA (8x10)

MT47H512M4THN-25E:M TR

Micron Technology Inc.

Manufacturer

Micron Technology Inc.

Series

-

Memory Type

Volatile

Memory Format

DRAM

Technology

SDRAM - DDR2

Memory Size

2Gb (512M x 4)

Memory Interface

Parallel

Clock Frequency

400MHz

Write Cycle Time - Word, Page

15ns

Access Time

400ps

Voltage - Supply

1.7V ~ 1.9V

Operating Temperature

0°C ~ 85°C (TC)

Mounting Type

Surface Mount

Package / Case

63-TFBGA

Supplier Device Package

63-FBGA (8x10)