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MBRT600150R Datasheet

MBRT600150R Cover
DatasheetMBRT600150R
File Size792.8 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 4 part numbers
Associated Parts MBRT600150R, MBRT600200, MBRT600150, MBRT600200R
Description DIODE SCHOTTKY 150V 300A 3 TOWER, DIODE SCHOTTKY 200V 300A 3 TOWER, DIODE SCHOTTKY 150V 300A 3 TOWER, DIODE SCHOTTKY 200V 300A 3 TOWER

MBRT600150R - GeneSiC Semiconductor

MBRT600150R Datasheet Page 1
MBRT600150R Datasheet Page 2
MBRT600150R Datasheet Page 3

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URL Link

MBRT600150R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

150V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

880mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 150V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT600200

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

920mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 200V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT600150

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

150V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

880mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 150V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT600200R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

920mV @ 300A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 200V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower