Top

MBR50080CTR Datasheet

MBR50080CTR Cover
DatasheetMBR50080CTR
File Size687.5 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts MBR50080CTR, MBR50080CT, MBR50060CTR, MBR50060CT, MBR50045CTR, MBR500100CTR, MBR500100CT, MBR50045CT
Description DIODE MODULE 80V 500A 2TOWER, DIODE MODULE 80V 500A 2TOWER, DIODE MODULE 600V 500A 2TOWER, DIODE MODULE 600V 500A 2TOWER, DIODE MODULE 45V 500A 2TOWER

MBR50080CTR - GeneSiC Semiconductor

MBR50080CTR Datasheet Page 1
MBR50080CTR Datasheet Page 2
MBR50080CTR Datasheet Page 3

The Products You May Be Interested In

MBR50080CTR MBR50080CTR GeneSiC Semiconductor DIODE MODULE 80V 500A 2TOWER 176

More on Order

MBR50080CT MBR50080CT GeneSiC Semiconductor DIODE MODULE 80V 500A 2TOWER 417

More on Order

MBR50060CTR MBR50060CTR GeneSiC Semiconductor DIODE MODULE 600V 500A 2TOWER 431

More on Order

MBR50060CT MBR50060CT GeneSiC Semiconductor DIODE MODULE 600V 500A 2TOWER 447

More on Order

MBR50045CTR MBR50045CTR GeneSiC Semiconductor DIODE MODULE 45V 500A 2TOWER 450

More on Order

MBR500100CTR MBR500100CTR GeneSiC Semiconductor DIODE MODULE 100V 500A 2TOWER 613

More on Order

MBR500100CT MBR500100CT GeneSiC Semiconductor DIODE MODULE 100V 500A 2TOWER 327

More on Order

MBR50045CT MBR50045CT GeneSiC Semiconductor DIODE MODULE 45V 500A 2TOWER 476

More on Order

URL Link

MBR50080CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50080CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50060CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

800mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50060CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

800mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50045CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR500100CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR500100CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

880mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50045CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower