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MBR50040CTR Datasheet

MBR50040CTR Cover
DatasheetMBR50040CTR
File Size699.91 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts MBR50040CTR, MBR50040CT, MBR50035CTR, MBR50030CTR, MBR50020CTR, MBR50035CT, MBR50030CT, MBR50020CT
Description DIODE MODULE 40V 500A 2TOWER, DIODE MODULE 40V 500A 2TOWER, DIODE MODULE 35V 500A 2TOWER, DIODE MODULE 30V 500A 2TOWER, DIODE MODULE 20V 500A 2TOWER

MBR50040CTR - GeneSiC Semiconductor

MBR50040CTR Datasheet Page 1
MBR50040CTR Datasheet Page 2
MBR50040CTR Datasheet Page 3

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URL Link

MBR50040CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50040CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50035CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50030CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50020CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

20V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50035CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50030CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR50020CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

20V

Current - Average Rectified (Io) (per Diode)

500A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 250A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower