Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | MBR40045CTRL |
| File Size | 542.14 KB |
| Total Pages | 3 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | MBR40045CTRL, MBR40045CTL |
| Description | DIODE SCHOTTKY 45V 200A 2 TOWER, DIODE SCHOTTKY 45V 200A 2 TOWER |
MBR40045CTRL - GeneSiC Semiconductor
The Products You May Be Interested In
 |
MBR40045CTRL | GeneSiC Semiconductor | DIODE SCHOTTKY 45V 200A 2 TOWER | 402 More on Order |
 |
MBR40045CTL | GeneSiC Semiconductor | DIODE SCHOTTKY 45V 200A 2 TOWER | 589 More on Order |
URL Link
|
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) (per Diode) 200A Voltage - Forward (Vf) (Max) @ If 600mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5mA @ 45V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) (per Diode) 200A Voltage - Forward (Vf) (Max) @ If 600mV @ 200A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 5mA @ 45V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |