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MBR40035CTRL Datasheet

MBR40035CTRL Cover
DatasheetMBR40035CTRL
File Size502.29 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts MBR40035CTRL, MBR40035CTL
Description DIODE SCHOTTKY 35V 200A 2 TOWER, DIODE SCHOTTKY 35V 200A 2 TOWER

MBR40035CTRL - GeneSiC Semiconductor

MBR40035CTRL Datasheet Page 1
MBR40035CTRL Datasheet Page 2
MBR40035CTRL Datasheet Page 3

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URL Link

MBR40035CTRL

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io) (per Diode)

200A

Voltage - Forward (Vf) (Max) @ If

600mV @ 200A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

3mA @ 35V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR40035CTL

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io) (per Diode)

200A

Voltage - Forward (Vf) (Max) @ If

600mV @ 200A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

3mA @ 35V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower