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MBR30020CT Datasheet

MBR30020CT Cover
DatasheetMBR30020CT
File Size711.5 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts MBR30020CT, MBR30035CT, MBR30040CTR, MBR30040CT, MBR30030CTR, MBR30030CT, MBR30020CTR, MBR30035CTR
Description DIODE MODULE 20V 300A 2TOWER, DIODE MODULE 35V 200A 2TOWER, DIODE MODULE 40V 300A 2TOWER, DIODE MODULE 40V 300A 2TOWER, DIODE MODULE 30V 300A 2TOWER

MBR30020CT - GeneSiC Semiconductor

MBR30020CT Datasheet Page 1
MBR30020CT Datasheet Page 2
MBR30020CT Datasheet Page 3

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URL Link

MBR30020CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

20V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30035CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io) (per Diode)

200A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30040CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30040CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30030CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30030CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30020CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

20V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30035CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io) (per Diode)

300A

Voltage - Forward (Vf) (Max) @ If

700mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 35V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower