Top

MBR300100CT Datasheet

MBR300100CT Cover
DatasheetMBR300100CT
File Size711.92 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts MBR300100CT, MBR30080CT, MBR30045CT, MBR300100CTR, MBR30080CTR, MBR30060CTR, MBR30060CT, MBR30045CTR
Description DIODE MODULE 100V 300A 2TOWER, DIODE MODULE 80V 300A 2TOWER, DIODE MODULE 45V 300A 2TOWER, DIODE MODULE 100V 300A 2TOWER, DIODE MODULE 80V 300A 2TOWER

MBR300100CT - GeneSiC Semiconductor

MBR300100CT Datasheet Page 1
MBR300100CT Datasheet Page 2
MBR300100CT Datasheet Page 3

The Products You May Be Interested In

MBR300100CT MBR300100CT GeneSiC Semiconductor DIODE MODULE 100V 300A 2TOWER 201

More on Order

MBR30080CT MBR30080CT GeneSiC Semiconductor DIODE MODULE 80V 300A 2TOWER 236

More on Order

MBR30045CT MBR30045CT GeneSiC Semiconductor DIODE MODULE 45V 300A 2TOWER 602

More on Order

MBR300100CTR MBR300100CTR GeneSiC Semiconductor DIODE MODULE 100V 300A 2TOWER 589

More on Order

MBR30080CTR MBR30080CTR GeneSiC Semiconductor DIODE MODULE 80V 300A 2TOWER 438

More on Order

MBR30060CTR MBR30060CTR GeneSiC Semiconductor DIODE MODULE 60V 300A 2TOWER 360

More on Order

MBR30060CT MBR30060CT GeneSiC Semiconductor DIODE MODULE 60V 300A 2TOWER 526

More on Order

MBR30045CTR MBR30045CTR GeneSiC Semiconductor DIODE MODULE 45V 300A 2TOWER 209

More on Order

URL Link

MBR300100CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

840mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30080CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

840mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30045CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR300100CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

840mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30080CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

80V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

840mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30060CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30060CT

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower

MBR30045CTR

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

45V

Current - Average Rectified (Io) (per Diode)

300A (DC)

Voltage - Forward (Vf) (Max) @ If

650mV @ 150A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

8mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Twin Tower

Supplier Device Package

Twin Tower