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| Datasheet | MBR12035CT |
| File Size | 718.15 KB |
| Total Pages | 3 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 8 part numbers |
| Associated Parts | MBR12035CT, MBR12030CTR, MBR12030CT, MBR12020CTR, MBR12020CT, MBR12040CTR, MBR12040CT, MBR12035 CTR |
| Description | DIODE MODULE 35V 120A 2TOWER, DIODE MODULE 30V 120A 2TOWER, DIODE MODULE 30V 120A 2TOWER, DIODE MODULE 20V 120A 2TOWER, DIODE MODULE 20V 120A 2TOWER |
MBR12035CT - GeneSiC Semiconductor
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 60A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) (per Diode) 120A (DC) Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 3mA @ 20V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |