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MBD770DWT1G Datasheet

MBD770DWT1G Cover
DatasheetMBD770DWT1G
File Size52.12 KB
Total Pages3
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts MBD770DWT1G, NSVMBD770DW1T1G
Description RF DIODE SCHOTTKY 70V 380MW SC88, DIODE SCHOTTKY 70V 100MA SC88

MBD770DWT1G - ON Semiconductor

MBD770DWT1G Datasheet Page 1
MBD770DWT1G Datasheet Page 2
MBD770DWT1G Datasheet Page 3

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URL Link

MBD770DWT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Schottky - 2 Independent

Voltage - Peak Reverse (Max)

70V

Current - Max

100mA

Capacitance @ Vr, F

1pF @ 20V, 1MHz

Resistance @ If, F

-

Power Dissipation (Max)

380mW

Operating Temperature

-55°C ~ 150°C (TJ)

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

NSVMBD770DW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

70V

Current - Average Rectified (Io)

100mA

Voltage - Forward (Vf) (Max) @ If

500mV @ 1mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

200nA @ 35V

Capacitance @ Vr, F

1pF @ 20V, 1MHz

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

Operating Temperature - Junction

-55°C ~ 150°C