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| Datasheet | KSC1674COTA |
| File Size | 159.82 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 10 part numbers |
| Associated Parts | KSC1674COTA, KSC1674RTA, KSC1674RBU, KSC1674CYBU, KSC1674CYTA, KSC1674COBU, KSC1674YTA, KSC1674OTA, KSC1674OBU, KSC1674YBU |
| Description | RF TRANS NPN 20V 600MHZ TO92-3, RF TRANS NPN 20V 600MHZ TO92-3, RF TRANS NPN 20V 600MHZ TO92-3, RF TRANS NPN 20V 600MHZ TO92-3, RF TRANS NPN 20V 600MHZ TO92-3 |
KSC1674COTA - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type NPN Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 100MHz Gain - Power - Max 250mW DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V Current - Collector (Ic) (Max) 20mA Operating Temperature 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |