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IXUC200N055 Datasheet

IXUC200N055 Cover
DatasheetIXUC200N055
File Size468.5 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXUC200N055
Description MOSFET N-CH 55V 200A ISOPLUS-220

IXUC200N055 - IXYS

IXUC200N055 Datasheet Page 1
IXUC200N055 Datasheet Page 2

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IXUC200N055 IXUC200N055 IXYS MOSFET N-CH 55V 200A ISOPLUS-220 512

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URL Link

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5.1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™