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IXTX200N10L2 Datasheet

IXTX200N10L2 Cover
DatasheetIXTX200N10L2
File Size133.8 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXTX200N10L2, IXTK200N10L2
Description MOSFET N-CH 100V 200A PLUS247, MOSFET N-CH 100V 200A TO-264

IXTX200N10L2 - IXYS

IXTX200N10L2 Datasheet Page 1
IXTX200N10L2 Datasheet Page 2
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IXTX200N10L2 Datasheet Page 5

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URL Link

Manufacturer

IXYS

Series

Linear L2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

540nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

23000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

Manufacturer

IXYS

Series

Linear L2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

200A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

4.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs

540nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

23000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 (IXTK)

Package / Case

TO-264-3, TO-264AA