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IXTT110N10L2 Datasheet

IXTT110N10L2 Cover
DatasheetIXTT110N10L2
File Size136.23 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXTT110N10L2, IXTH110N10L2
Description MOSFET N-CH 100V 110A TO-268, MOSFET N-CH 100V 110A TO-247

IXTT110N10L2 - IXYS

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IXTH110N10L2 IXTH110N10L2 IXYS MOSFET N-CH 100V 110A TO-247 431

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URL Link

Manufacturer

IXYS

Series

Linear L2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 55A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10500pF @ 25V

FET Feature

-

Power Dissipation (Max)

600W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Manufacturer

IXYS

Series

Linear L2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10500pF @ 25V

FET Feature

-

Power Dissipation (Max)

600W (Tc)

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3