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| Datasheet | IXTP60N20T |
| File Size | 135.24 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXTP60N20T, IXTA60N20T |
| Description | MOSFET N-CH 200V 60A TO-220, MOSFET N-CH 200V 60A TO-263 |
IXTP60N20T - IXYS
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Manufacturer IXYS Series Trench™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer IXYS Series Trench™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 40mOhm @ 30A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature - Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |