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IXTP1N80P Datasheet

IXTP1N80P Cover
DatasheetIXTP1N80P
File Size161.96 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXTP1N80P, IXTY1N80P
Description MOSFET N-CH 800V 1A TO-220, MOSFET N-CH 800V 1A TO-252

IXTP1N80P - IXYS

IXTP1N80P Datasheet Page 1
IXTP1N80P Datasheet Page 2
IXTP1N80P Datasheet Page 3
IXTP1N80P Datasheet Page 4
IXTP1N80P Datasheet Page 5

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IXTP1N80P IXTP1N80P IXYS MOSFET N-CH 800V 1A TO-220 611

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IXTY1N80P IXTY1N80P IXYS MOSFET N-CH 800V 1A TO-252 260

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URL Link

IXTP1N80P

IXYS

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IXTY1N80P

IXYS

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

9nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

250pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252, (D-Pak)

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63